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SGM721 SGM722 SGM723 SGM724
PRODUCT DESCRIPTION
The SGM721 (single), SGM722 (dual), SGM723 (single with shutdown) and SGM724 (quad) are low noise, low voltage, and low power operational amplifiers, that can be designed into a wide range of applications. The SGM721/2/3/4 have a high Gain- Bandwidth Product of 10MHz, a slew rate of 8.5V/s, and a quiescent current of 0.97mA/amplifier at 5V. The SGM723 has a power-down disable feature that reduces the supply current to 160nA. The SGM721/2/3/4 are designed to provide optimal performance in low voltage and low noise systems. They provide rail-to-rail output swing into heavy loads. The input common-mode voltage range includes ground, and the maximum input offset voltage is 4mV for SGM721/2/3/4. They are specified over the extended industrial temperature range (-40C to +125C). The operating range is from 2.5V to 5.5V. The single version, SGM721 is available in SC70-5, SOT23-5 and SO-8 packages. SGM723 is available in SOT23-6 and SO-8 packages. The dual version SGM722 is available in SO-8 and MSOP-8 packages. The quad version SGM724 is
970A, 10MHz, Rail-to-Rail I/O CMOS Operational Amplifier
FEATURES
* Low Cost * Rail-to-Rail Input and Output 1mV Typical VOS * High Gain-Bandwidth Product: 10MHz * High Slew Rate: 8.5V/s * Settling Time to 0.1% with 2V Step: 0.36 s * Overload Recovery Time: 0.4s * Low Noise : 8 nV/ Hz * Operates on 2.5 V to 5.5V Supplies * Input Voltage Range = - 0.1 V to +5.6 V with VS = 5.5 V * Low Power 0.97 mA/Amplifier Typical Supply Current SGM723 160nA when Disabled * Small Packaging SGM721 Available in SC70-5, SOT23-5 and SO-8 SGM722 Available in MSOP-8 and SO-8 SGM723 Available in SOT23-6 and SO-8 SGM724 Available in TSSOP-16 and SO-16
PIN CONFIGURATIONS (Top View)
SGM721
OUT -VS 1 2 4 SC70-5 / SOT23-5 -IN 5 +VS NC -IN +IN -VS 1 2 3 4
available in SO-16 and TSSOP-16 packages.
SGM721/723
8 7 6 5
NC = NO CONNECT
DISABLE (SGM723 ONLY) +VS OUT NC
+IN 3
APPLICATIONS
Sensors Audio Active Filters A/D Converters Communications Test Equipment Cellular and Cordless Phones Laptops and PDAs Photodiode Amplification Battery-Powered Instrumentation
OUT -VS +IN 1 2 3
SGM723
723
SOT23-6 6 5 4 +VS DISABLE -IN
SO-8
SGM724
OUT A -IN A +IN A +VS 1 2 3 4 5 6 7 8
NC = NO CONNECT
16 OUT D 15 -IND 14 +IND 13 -VS 12 +INC 11 10 9 -INC OUT C NC
SGM722
OUT A 1 -IN A +IN A 2 3 8 7 6 5 SO-8 / MSOP-8 +VS OUT B -IN B +IN B
+INB -INB OUT B NC
-VS 4
TSSOP-16 / SO-16
Shengbang Microelectronics Co, Ltd Tel: 86/451/84348461 www.sg-micro.com
REV. B
ELECTRICAL CHARACTERISTICS :VS = +5V
(At TA = +25,VCM = Vs/2, RL = 600, unless otherwise noted)
SGM721/2/3/4 PARAMETER CONDITION TYP +25 INPUT CHARACTERISTICS Input Offset Voltage (VOS) Input Bias Current (IB) Input Offset Current (IOS) Common-Mode Voltage Range (VCM) Common-Mode Rejection Ratio(CMRR) Open-Loop Voltage Gain( AOL) Input Offset Voltage Drift (VOS/T) OUTPUT CHARACTERISTICS Output Voltage Swing from Rail Output Current (IOUT) Closed-Loop Output Impedance POWER-DOWN Turn-On Time Turn-Off Time
DISABLE DISABLE
MIN/MAX OVER TEMPERATURE +25 4 0 to 70 4.5 -40 to 85 4.75 -40 to 125 5 UNITS mV pA pA V 75 64 84 95 74 64 81 90 73 63 80 88 72.5 62 72 77 dB dB dB dB V/ V V 53 52 50 45 mA s s 0.8 2 2.5 5.5 2.5 5.5 79 1.25 2.5 5.5 78 1.28 2.5 5.5 77 1.38 V V V V dB mA A MIN/ MAX MAX TYP TYP TYP MIN MIN MIN MIN TYP TYP TYP MIN TYP TYP TYP MAX MIN MIN MAX MIN MAX MAX
1 1 1 VS = 5.5V VS = 5.5V, VCM = - 0.1V to 4 V VS = 5.5V, VCM = - 0.1V to 5.6 V RL = 600 ,Vo = 0.15V to 4.85V RL =10K ,Vo = 0.05V to 4.95V -0.1 to +5.6 91 86 90 100 2.1 RL = 600 RL = 10K F = 1MHz, G = +1 0.1 0.015 57 5.7 2.2 0.8
DISABLE
Voltage-Off Voltage-On
POWER SUPPLY Operating Voltage Range Power Supply Rejection Ratio (PSRR) Quiescent Current/ Amplifier (IQ) Supply Current when Disabled (SGM723 only) DYNAMIC PERFORMANCE Gain-Bandwidth Product (GBP) Phase Margin(O) Full Power Bandwidth(BWP) Slew Rate (SR) Settling Time to 0.1%( tS) Overload Recovery Time NOISE PERFORMANCE Voltage Noise Density (en) Current Noise Density( in) f = 1kHz f = 10kHz f = 1kHz 8 6.4 10 nV/ nV/ fA/
Hz Hz Hz
Vs = +2.5 V to + 5.5 V VCM = (-VS) + 0.5V IOUT = 0 100 0.97 0.16 RL = 600 10 63.5 1% distortion G = +1, 2 V Output Step G = +1, 2 V Output Step VIN *Gain = Vs 400 8.5 0.36 0.4 MHz KHz V/s s s TYP TYP TYP TYP TYP TYP TYP TYP degrees TYP 80 1.13 1
Specifications subject to change without notice.
SGM721/2/3/4
PACKAGE/ORDERING INFORMATION
MODEL ORDER NUMBER SGM721XC5/TR SGM721 SGM721XN5/TR SGM721XS/TR SGM722 SGM723 SGM724 SGM722XMS/TR SGM722XS/TR SGM723XN6/TR SGM723XS/TR SGM724XS/TR SGM724XTS PACKAGE DESCRIPTION SC70-5 SOT23-5 SO-8 MSOP-8 SO-8 SOT23-6 SO-8 SO-16 TSSOP-16 PACKAGE OPTION Tape and Reel, 3000 Tape and Reel, 3000 Tape and Reel, 2500 Tape and Reel, 3000 Tape and Reel, 2500 Tape and Reel, 3000 Tape and Reel, 2500 Tape and Reel, 2500 Tape and Reel, 3000 MARKING INFORMATION 721 721 SGM721XS SGM722XMS SGM722XS 723 SGM723XS SGM724XS SGM724XTS
ABSOLUTE MAXIMUM RATINGS
Supply Voltage, V+ to V- ............................................ 7.5 V Common-Mode Input Voltage .................................... (-VS) - 0.5 V to (+VS) +0.5V Storage Temperature Range..................... -65 to +150 Junction Temperature.................................................160 Operating Temperature Range.................-55 to +150 Package Thermal Resistance @ TA = 25 SC70-5, JA................................................................ 333/W SOT23-5, JA.............................................................. 190/W SOT23-6, JA.............................................................. 190/W SO-8, JA......................................................................125/W MSOP-8, JA.............................................................. 216/W SO-16, JA..................................................................... 82/W TSSOP-16, JA............................................................ 105/W Lead Temperature Range (Soldering 10 sec)
CAUTION
This integrated circuit can be damaged by ESD. Shengbang Micro-electronics recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
.....................................................260
ESD Susceptibility HBM................................................................................1500V MM....................................................................................400V
NOTES 1. Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
SGM721/2/3/4
TYPICAL PERFORMANCE CHARACTERISTICS
At TA = +25,VCM = Vs/2, RL = 600, unless otherwise noted.
Closed-Loop Output Voltage Swing 6
100
Output Impedance vs.Frequency Vs = 5V
5 Output Voltage(Vp-p)
Output Impedance()
4 3 2 1 0 10
Vs = 5V VIN = 4.9VP-P TA = 25 RL = 2K G = +1
80 60 40 20 0
G = 100 G = 10 G =1
100 1000 Frequency(kHz)
10000
1
10
100 Frequency(kHz)
1000
10000
Positive Overload Recovery
Negative Overload Recovery Vs = 2.5V RL = 10K VIN = 50mV G = 100
+2.5V Vs = 2.5V RL = 10K VIN = 50mV G = 100
+2.5V
0V 0V
0V 0V
-50mV
-50mV
Time(500ns/div)
Time(500ns/div)
Large-Signal Step Response
Vs = 5V G = +1 CL = 200pF RL = 10K
Small-Signal Step Response
Vs = 5V G = +1 CL = 100pF RL = 10K
Voltage(1V/div)
Time(500ns/div)
Voltage(50mV/div)
Time(200ns/div)
SGM721/2/3/4
TYPICAL PERFORMANCE CHARACTERISTICS
At TA = +25,VCM = Vs/2, RL = 600, unless otherwise noted.
PSRR vs.Frequency 120 Vs = 5V 100 80 60 40 20 1 10 100 Frequency(kHz) 1000 10000
120 110 100 CMRR(dB) 90 80 70 60 50 40 1 10
CMRR vs.Frequency Vs = 5V
PSRR(dB)
100 Frequency(kHz)
1000
10000
Small-Signal Overshoot vs.Load Capacitance 70 Small-Signal Overshoot(%) 60 50 40 30 20 10 0 1 10 100 Load Capacitance(pF) 1000 Vs = 5V RL = 10k TA = 25 G=1 +OS -OS
100
Voltage Noise(nV/Hz)
Input Voltage Noise Spectral Density vs.Frequency
Vs = 5V RL = 620
10
1 10 100 1000 10000 Frequency(Hz)
Channel Separation vs.Frequency 130 120 Channel Separation(dB) Open-Loop Gain(dB) 110 100 90 80 70 0.1 1 10 100 1000 Frequency(kHz) 10000 100000 120 110
Open-Loop Gain vs.Temperature
RL = 10K 100 90 80 70 -50 -30 -10 10 30 50 70 90 110 130 Temperature()
Vs = 5V RL = 620 TA = 25 G=1
RL = 600
SGM721/2/3/4
TYPICAL PERFORMANCE CHARACTERISTICS
At TA = +25,VCM = Vs/2, RL = 600, unless otherwise noted.
CMRR vs.Temperature 120 VS = 5.5V 110 100 CMRR(dB) 90 80 70 60 -50 -30 -10 10 30 50 70 90 110 130 Temperature() VCM = - 0.1V to 5.6V VCM = - 0.1V to 4 V
PSRR vs.Temperature 130 120 110 PSRR(dB) 100 90 80 70 -50 -30 -10 10 30 50 70 Temperature() 90 110 130 VS = 2.5V to 5.5V
Supply Current vs.Temperature 1.4 1.3 Supply Current(mA) 1.2 1.1 1 0.9 0.8 0.7 0.6 -50 -30 -10 10 30 50 70 Temperature() 90 110 130 VS = 5V VS = 3V VS = 2.5V
Shutdown Current vs.Temperature 300 260 Shutdown Current(nA) 220 180 140 100 60 20 -50 -30 -10 10 30 50 70 Temperature() 90 110 130 VS = 2.5V VS = 3V VS = 5V
Output Voltage Swing vs.Output Current 5 4 Output Voltage(V) 3 135 2 1 Sinking Current 0 0 10 20 30 40 50 60 70 Output Current(mA) 80 90
0 0
Output Voltage Swing vs.Output Current 3 Sourcing Current Output Voltage(V) VS = 3V 2 135 1 Sinking Current 10 20 30 40 Output Current(mA) 50 60 25 -50
Sourcing Current VS = 5V
25
-50
SGM721/2/3/4
TYPICAL PERFORMANCE CHARACTERISTICS
At TA = +25,VCM = Vs/2, RL = 600, unless otherwise noted.
Small-Signal Overshoot vs.Load Capacitance 70 Small-Signal Overshoot(%) 60 50 40 30 20 10 0 1 10 100 Load Capacitance(pF) 1000 Vs = 2.7V RL = 10k TA = 25 G=1 +OS -OS
120 100 Output Impedance() 80 60 G = 100 40 20 0 1 10 100 Frequency(kHz) 1000 10000 G = 10 G =1 Vs = 2.7V Output Impedance vs.Frequency
Large-Signal Step Response
Vs = 2.7V G = +1 CL = 200pF RL = 10K
Small-Signal Step Response
Vs = 2.7V G = +1 CL = 100pF RL = 10K
Time(500ns/div)
Voltage(50mV/div)
Voltage(1V/div)
Time(200ns/div)
Closed-Loop Output Voltage Swing 3 2.5 Output Voltage(Vp-p) 2 1.5 1 0.5 0 10 100 1000 Frequency(kHz) 10000 Vs = 2.7V VIN = 2.6VP-P TA = 25 RL = 2K G=1
Channel Separation(dB) 130 120 110 100 90 80 70 0.1
Channel Separation vs.Frequency
Vs = 2.7V RL = 620 TA = 25 G=1
1
10 100 1000 Frequency(kHz)
10000 100000
SGM721/2/3/4
TYPICAL PERFORMANCE CHARACTERISTICS
At TA = +25,VCM = Vs/2, RL = 600, unless otherwise noted.
Offset Voltage Production Distribution 33 30 27 24 21 18 15 12 9 6 3 0 Percent of Amplifiers(%)
Typical production distribution of packaged units.
-4
-3
-2
-1
0
1
2
3
4
Offset Voltage(mV)
SGM721/2/3/4
APPLICATION NOTES
Driving Capacitive Loads
The SGM72x can directly drive 4700pF in unity-gain without oscillation. The unity-gain follower (buffer) is the most sensitive configuration to capacitive loading. Direct capacitive loading reduces the phase margin of amplifiers and this results in ringing or even oscillation. Applications that require greater capacitive drive capability should use an isolation resistor between the output and the capacitive load like the circuit in Figure 1. The isolation resistor RISO and the load capacitor CL form a zero to increase stability. The bigger the RISO resistor value, the more stable VOUT will be. Note that this method results in a loss of gain accuracy because RISO forms a voltage divider with the RLOAD.
Power-Supply Bypassing and Layout
The SGM72x family operates from either a single +2.5V to +5.5V supply or dual 1.25V to 2.75V supplies. For single-supply operation, bypass the power supply VDD with a 0.1F ceramic capacitor which should be placed close to the VDD pin. For dual-supply operation, both the VDD and the VSS supplies should be bypassed to ground with separate 0.1F ceramic capacitors. 2.2F tantalum capacitor can be added for better performance. Good PC board layout techniques optimize performance by decreasing the amount of stray capacitance at the op amp's inputs and output. To decrease stray capacitance, minimize trace lengths and widths by placing external components as close to the device as possible. Use surface-mount components whenever possible. For the operational amplifier, soldering the part to the board directly is strongly recommended. Try to keep the high frequency big current loop area small to minimize the EMI (electromagnetic interfacing).
RISO
SGM721
VOUT CL
VIN
VDD
Figure 1. Indirectly Driving Heavy Capacitive Load An improvement circuit is shown in Figure 2. It provides DC accuracy as well as AC stability. RF provides the DC accuracy by connecting the inverting signal with the output. CF and RIso serve to counteract the loss of phase margin by feeding the high frequency component of the output signal back to the amplifier's inverting input, thereby preserving phase margin in the overall feedback loop.
10F 0.1F
VDD
10F 0.1F Vn VOUT 10F
Vn
SGM721
VOUT
SGM721
Vp
Vp
CF RF RISO
SGM721
VSS(GND)
0.1F
VOUT CL RL
VSS
Figure 3. Amplifier with Bypass Capacitors
VIN
Figure 2. Indirectly Driving Heavy Capacitive Load with DC Accuracy For no-buffer configuration, there are two others ways to increase the phase margin: (a) by increasing the amplifier's gain or (b) by placing a capacitor in parallel with the feedback resistor to counteract the parasitic capacitance associated with inverting node.
Grounding
A ground plane layer is important for SGM72x circuit design. The length of the current path speed currents in an inductive ground return will create an unwanted voltage noise. Broad ground plane areas will reduce the parasitic inductance.
Input-to-Output Coupling
To minimize capacitive coupling, the input and output signal traces should not be parallel. This helps reduce unwanted positive feedback.
SGM721/2/3/4
Typical Application Circuits
Differential Amplifier
The circuit shown in Figure 4 performs the difference function. If the resistors ratios are equal ( R4 / R3 = R2 / R1 ), then VOUT = ( Vp - Vn ) x R2 / R1 + Vref.
C R2 R1 VIN
SGM721
R2 Vn Vp R3 R4 Vref
Figure 4. Differential Amplifier
VOUT
R1
SGM721
VOUT
R3=R1//R2
Figure 6. Low Pass Active Filter
Instrumentation Amplifier
The circuit in Figure 5 performs the same function as that in Figure 4 but with the high input impedance.
R2 R1
SGM721
Vn
SGM721
VOUT
Vp
SGM721
R3
R4
Vref
Figure 5. Instrumentation Amplifier
Low Pass Active Filter
The low pass filter shown in Figure 6 has a DC gain of (-R2/R1) and the -3dB corner frequency is 1/2R2C. Make sure the filter is within the bandwidth of the amplifier. The Large values of feedback resistors can couple with parasitic capacitance and cause undesired effects such as ringing or oscillation in high-speed amplifiers. Keep resistors value as low as possible and consistent with output loading consideration.
SGM721/2/3/4
PACKAGE OUTLINE DIMENSIONS
SC70-5
D e1 e L
Symbol
A A1 A2
Dimensions In Millimeters Min
0.900 0.000 0.900 0.150 0.080 2.000 1.150 2.150 1.200 0.260 0
Dimensions In Inches Min
0.035 0.000 0.035 0.006 0.003 0.079 0.045 0.085 0.047 0.010 0
Max
1.100 0.100 1.000 0.350 0.150 2.200 1.350 2.450 1.400 0.460 8
Max
0.043 0.004 0.039 0.014 0.006 0.087 0.053 0.096 0.055 0.018 8
E1
E
b c D
L1
b A1 C
0.20
E E1 e e1
0.650TYP 0.525REF
0.026TYP 0.021REF
A2
A
L L1
SGM721/2/3/4
PACKAGE OUTLINE DIMENSIONS
SOT23-5
D b L
0
0.20
Symbol
A A1
Dimensions In Millimeters Min
1.050 0.000 1.050 0.300 0.100 2.820 1.500 2.650 1.800 0.300 0
Dimensions In Inches Min
0.041 0.000 0.041 0.012 0.004 0.111 0.059 0.104 0.071 0.012 0
Max
1.250 0.100 1.150 0.400 0.200 3.020 1.700 2.950 2.000 0.600 8
Max
0.049 0.004 0.045 0.016 0.008 0.119 0.067 0.116 0.079 0.024 8
E1
A2 b c
E
L
e e1 A1
D
C
E E1 e e1
0.950TYP 0.700REF
0.037TYP 0.028REF
A2
L L1
A
SGM721/2/3/4
PACKAGE OUTLINE DIMENSIONS
SOT23-6
D e1 e L
0
0.20
Symbol
A A1 A2 b c D E E1
Dimensions In Millimeters Min
1.050 0.000 1.050 0.300 0.100 2.820 1.500 2.650 1.800 0.300 0
Dimensions In Inches Min
0.041 0.000 0.041 0.012 0.004 0.111 0.059 0.104 0.071 0.012 0
Max
1.250 0.100 1.150 0.400 0.200 3.020 1.700 2.950 2.000 0.600 8
Max
0.049 0.004 0.045 0.016 0.008 0.119 0.067 0.116 0.079 0.024 8
E1
E
b A1
L C
e e1 L
0.950TYP 0.700REF
0.037TYP 0.028REF
A2
A
L1
SGM721/2/3/4
PACKAGE OUTLINE DIMENSIONS
SO-8
D C
Symbol
L
Dimensions In Millimeters Min Max
1.750 0.250 1.550 0.510 0.250 5.000 4.000 6.300 1.270 8 1.350 0.100 1.350 0.330 0.190 4.780 3.800 5.800 0.400 0
Dimensions In Inches Min
0.053 0.004 0.053 0.013 0.007 0.188 0.150 0.228 0.016 0
Max
0.069 0.010 0.061 0.020 0.010 0.197 0.157 0.248 0.050 8
A A1
E1 E
A2 B C D
e
E E1 e
A1
1.270TYP
0.050TYP
B A2
L
A
SGM721/2/3/4
PACKAGE OUTLINE DIMENSIONS
MSOP-8
b
C
Symbol
A A1 A2 b c D e E E1 L
Dimensions In Millimeters Min Max
0.800 1.200 0.000 0.200 0.760 0.970 0.30 TYP 0.15 TYP 2.900 3.100 0.65 TYP 2.900 3.100 4.700 5.100 0.410 0.650 0 6
Dimensions In Inches Min Max
0.031 0.047 0.000 0.008 0.030 0.038 0.012 TYP 0.006 TYP 0.114 0.122 0.026 TYP 0.114 0.122 0.185 0.201 0.016 0.026 0 6
E1
E
e
D
A1
L
A2 A
SGM721/2/3/4
PACKAGE OUTLINE DIMENSIONS
SO-16
D C
Symbol
A A1 A2 b c D E E1 e L
E1 E
Dimensions In Millimeters Min Max
1.350 1.750 0.100 0.250 1.350 1.550 0.330 0.510 0.170 0.250 9.800 10.20 3.800 4.000 5.800 6.200 1.270 (BSC) 0.400 1.270 0 8
Dimensions In Inches Min Max
0.053 0.069 0.004 0.010 0.053 0.061 0.013 0.020 0.007 0.010 0.386 0.402 0.150 0.157 0.228 0.244 0.050 (BSC) 0.016 0.050 0 8
L e A2 A1 b A
SGM721/2/3/4
PACKAGE OUTLINE DIMENSIONS
TSSOP-16
A b
Symbol
E1 E
Dimensions In Millimeters Min Max
5.100 4.500 0.300 0.200 6.550 1.100 0.800 1.000 0.020 0.150 0.65 (BSC) 0.500 0.700 0.25(TYP) 1 7 4.900 4.300 0.190 0.090 6.250
Dimensions In Inches Min Max
0.193 0.169 0.007 0.004 0.246 0.201 0.177 0.012 0.008 0.258 0.043 0.031 0.039 0.001 0.006 0.026 (BSC) 0.020 0.028 0.01(TYP) 1 7
PIN #1 IDENT. e A2 A
C D L H A1
A
D E b c E1 A A2 A1 e L H
SGM721/2/3/4
REVISION HISTORY
Location Page
11/06-- Data Sheet changed from REV. A to REV. B Changes to ABSOLUTE MAXIMUM ATINGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Shengbang Microelectronics Co, Ltd
Unit 3, ChuangYe Plaza No.5, TaiHu Northern Street, YingBin Road Centralized Industrial Park Harbin Development Zone Harbin, HeiLongJiang 150078 P.R. China Tel.: 86-451-84348461 Fax: 86-451-84308461 www.sg-micro.com
SGM721/2/3/4

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